| PART |
Description |
Maker |
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| SK30GH12306 SK30GH123 |
IGBT Module IGBT模块
IGBT Module 33 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| PSHI50D-06 PSHI50D_06 PSHI50D/06 PSHI50D06 |
IGBT Module
IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
| 2MBI75S 2MBI75S-120 |
IGBT MODULE ( S-Series ) 2-Pack IGBT 1200V 2X75A IGBT模块S系列，包IGBT200X75A
5-Pin, Multiple-Input, Programmable Reset ICs 100 A, 1200 V, N-CHANNEL IGBT
|
http://
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CPU165MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| CPV363MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| 2MBI75UA-120 |
100 A, 1200 V, N-CHANNEL IGBT
IGBT Module U-Series 1200V / 75A 2 in one-package
|
FUJI ELECTRIC CO LTD
List of Unclassifed Manufacturers
|
| APTGT20H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 32 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT50H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
